Next-gen Power Conversion System for Consumer Electronics Reinforcing Market Potential
For years, silicon-based semiconductors such as silicon power MOSFETs have reigned supreme in power conversion applications. Numerous manufacturers of silicon power devices have expanded their product line. However, the past few years have witnessed fading distinctive competencies of these players in power electronics—opening a new era of product development in GaN semiconductor devices market.
Demand for GaN semiconductor devices has stridently thrived to meet an expanding panoply of power electronics applications in several industries. R&D has begun quite early—perhaps since the beginning of the last decade.
The product development has been gaining positive momentum, anchored on the promise of high performance, low cost of development, high power density, and energy efficiency of these wide-bandgap semiconductor devices. Amusingly, despite being viewed as a leapfrog technology from silicon-based ones, their lower cost is due to the fact that these can be manufactured using the same procedures as the silicon semiconductors.
With continuous technological advancements, the cost of production will only reduce further, thus spurring the pace of commercialization of newer devices in the GaN semiconductor devices market. Power electronics based on GaN semiconductors are making unprecedented penetration in RF and analog applications, aside from massive use in power conversion.
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IC Manufacturers Harp on Several Advantages Over Silicon Semiconductors to Stay Ebullient
There has been constant flux of new entrants for tapping into the abundant opportunity for GaN semiconductor devices. They are constantly adding capabilities notably in GaN transistors and making prices competitive to gain a higher pie of the GaN semiconductor devices market.
Tellingly, several of them are offering products that promise better power density and efficiency than the most advanced silicon-based devices. A case in point is numerous companies growing R&D on GaN HEMT devices (eHEMT). For one, a German semiconductor company Infineon Technologies AG is offering GaN HEMT devices for use in switched-mode power circuits. Interestingly, its product aims at delivering power conversion in the voltage range up to as high as 600V. Thus, new design opportunities in smaller GaN FETs are expected to pave the way to some incredible avenues in consumer electronics, automotive, and data centers applications.
Enormous Avenue for Commercialization of GaN Power Devices in Automotive Industry
The usage of GaN semiconductor devices has broadened strikingly over the years, hinged on relentless efforts of pioneers in arriving at breakthroughs in size and performance of the devices. GaN for automotive electronics is attracting groundswell of attention among spectrum of vehicles. Autonomous vehicles in particular have been one of the major applications where IC manufacturers are looking for enormous commercialization scope for their flagship products.
Inarguably, automotive electronics are on the path of becoming power hungry, with myriad autonomous features being added to cars over the years. Automotive LiDAR is a case in point, where firms in the GaN semiconductor devices market are eyeing vast revenue possibilities. Indeed, several OEMs and automotive companies GaN technology for meeting the goals of clean energy transition by promoting that as next-gen power semiconductor technology for autonomous vehicles.
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High Performance Gains and Reduced Cost Makes GaN Tech Attractive for EVs
Many stakeholders operating in the GaN semiconductor devices market are particularly ebullient in the application of the GaN technology in reinforcing e-mobility in transportation sector. Of note, they are geared toward expanding the range of power and functionality of GaN ICs with the aim of acting as an enabler for next-gen power electronics for electric vehicles. Tellingly, the market is expected to see new revenue streams from increasing number of Tier-1 automotive electronics manufacturers offering GaN FETs to electronically-driven functions in connected cars.
An in-depth business intelligence study evaluating opportunity for GaN semiconductor devices projects the global valuation to reach approximately US$ 4 Bn by 2027.
Si-to-GaN Data Center Upgrades Imparts Tailwind
The data traffic has multiplied several times over the past 10 years, and the trend is expected to continue so. In this backdrop, GaN-powered data centres might become a reality sooner than latter. GaN power ICs might act as a gamechanger for hyperscale data centers of modern day. The shift of Si-to-GaN data centers will prove pivotal for mission critical industries which constantly seek power-conversion efficiencies.
Another area where businesses in the GaN semiconductor devices are seeing a steady revenue potential is in portable consumer electronics. They are being increasingly harnessed for smartphone chargers and range of single-port and multi-port GaN-based chargers.
Going forward, continuing strides in the power electronics industry will lead to standard mass production designs in GaN semiconductor devices, and incessant focus on lowering the costs. This has unarguably started a new phase in semiconductor industry.
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